{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741815","patent":{"patent_number":"US-9741815","title":"Metal selenide and metal telluride thin films for semiconductor device applications","assignee":null,"inventors":[],"filing_date":"2015-06-16T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":23,"abstract":"In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in a reaction space in a cyclical deposition process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase selenium or tellurium reactant. In some aspects, methods of forming three-dimensional architectures on a substrate surface are provided. In some embodiments, the method includes forming a metal selenide or metal telluride interface layer between a substrate and a dielectric. In some embodiments, the method includes forming a metal selenide or metal telluride dielectric layer between a substrate and a conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Metal selenide and metal telluride thin films for semiconductor device applications","description":"In some aspects, methods of forming a metal selenide or metal telluride thin film are provided. According to some methods, a metal selenide or metal telluride thin film is deposited on a substrate in ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741815","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741815","citation_suggestion":"Patentable. \"Metal selenide and metal telluride thin films for semiconductor device applications\" (US-9741815). https://patentable.app/patents/US-9741815","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741815","json":"https://patentable.app/api/llm-context/US-9741815","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:47:53.628Z"}