{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741819","patent":{"patent_number":"US-9741819","title":"Transistor device and fabrication method","assignee":null,"inventors":[],"filing_date":"2015-09-10T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":17,"abstract":"The present disclosure provides a transistor device and fabrication method thereof. A dummy gate is formed on a substrate. An interlayer dielectric layer is formed on the substrate and sidewall surfaces of the dummy gate. The interlayer dielectric layer has a top surface coplanar with a top surface of the dummy gate. A mask layer is formed on the top surface of the interlayer dielectric layer. The mask layer is used as an etch mask to remove the dummy gate to form a trench in the interlayer dielectric layer to provide a trench footing on sidewall surfaces of the trench and near a trench bottom. The trench footing is then removed by applying a dry etching process. A gate electrode is then formed in the trench to form a transistor with improved electrical performance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor device and fabrication method","description":"The present disclosure provides a transistor device and fabrication method thereof. A dummy gate is formed on a substrate. An interlayer dielectric layer is formed on the substrate and sidewall surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741819","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741819","citation_suggestion":"Patentable. \"Transistor device and fabrication method\" (US-9741819). https://patentable.app/patents/US-9741819","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741819","json":"https://patentable.app/api/llm-context/US-9741819","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:32:33.758Z"}