{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741820","patent":{"patent_number":"US-9741820","title":"PMOS transistor and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-06-01T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"The disclosed subject matter provides a p-channel metal-oxide-semiconductor (PMOS) and fabrication method thereof. The PMOS transistor is fabricated by a method including forming a dummy gate structure on a semiconductor substrate, forming a source region and a drain region in the semiconductor substrate on both sides of the dummy gate structure, forming an intermediate layer to cover the dummy gate structure and the semiconductor substrate, and forming a multiple-level etching stop layer including at least a first etching stop layer and a second etching stop layer. The fabrication method also includes performing a UV curing process after forming each of the first and second etching stop layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"PMOS transistor and fabrication method thereof","description":"The disclosed subject matter provides a p-channel metal-oxide-semiconductor (PMOS) and fabrication method thereof. The PMOS transistor is fabricated by a method including forming a dummy gate structur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741820","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741820","citation_suggestion":"Patentable. \"PMOS transistor and fabrication method thereof\" (US-9741820). https://patentable.app/patents/US-9741820","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741820","json":"https://patentable.app/api/llm-context/US-9741820","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:30:58.644Z"}