{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741825","patent":{"patent_number":"US-9741825","title":"Method for manufacturing field effect transistor having widened trench","assignee":null,"inventors":[],"filing_date":"2016-12-08T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for manufacturing a field effect transistor having a widened trench forms sequentially an epitaxial layer, a trench, an oxidation layer, a trench-oxidation layer, a polysilicon layer, a residual oxidation layer, an electrode portion, a lower trench, a widened trench, a gate portion, a body region, a source region, an interlayer dielectric layer and a source electrode. The trench is formed at the epitaxial layer. The oxidation layer, the trench-oxidation layer and a polysilicon layer are then formed. The residual oxidation layer and the electrode portion are formed in the trench by etching the polysilicon layer and the trench-oxidation layer. The lower trench is formed by etching the epitaxial layer. The widened trench is formed by widening a portion of the trench away from a trench bottom so as to have the electrode portion and the residual oxidation layer disposed at the lower trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing field effect transistor having widened trench","description":"A method for manufacturing a field effect transistor having a widened trench forms sequentially an epitaxial layer, a trench, an oxidation layer, a trench-oxidation layer, a polysilicon layer, a resid","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741825","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741825","citation_suggestion":"Patentable. \"Method for manufacturing field effect transistor having widened trench\" (US-9741825). https://patentable.app/patents/US-9741825","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741825","json":"https://patentable.app/api/llm-context/US-9741825","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:33:04.086Z"}