{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741847","patent":{"patent_number":"US-9741847","title":"Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device","assignee":null,"inventors":[],"filing_date":"2015-11-30T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":23,"abstract":"One illustrative method disclosed includes, among other things, forming a vertically oriented semiconductor structure above a doped well region defined in a semiconductor substrate, the semiconductor structure comprising a lower source/drain region and an upper source/drain region, wherein the lower source/drain region physically contacts the upper surface of the substrate, forming a counter-doped isolation region in the substrate, forming a metal silicide region in the substrate above the counter-doped isolation region, wherein the metal silicide region is in physical contact with the lower source/drain region, and forming a lower source/drain contact structure that is conductively coupled to the metal silicide region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device","description":"One illustrative method disclosed includes, among other things, forming a vertically oriented semiconductor structure above a doped well region defined in a semiconductor substrate, the semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741847","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741847","citation_suggestion":"Patentable. \"Methods of forming a contact structure for a vertical channel semiconductor device and the resulting device\" (US-9741847). https://patentable.app/patents/US-9741847","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741847","json":"https://patentable.app/api/llm-context/US-9741847","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:20:55.326Z"}