{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741850","patent":{"patent_number":"US-9741850","title":"Semiconductor device and method for forming the same","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"A semiconductor device having a substrate, a gate electrode, a source and a drain, and a buried gate dielectric layer is disclosed. The buried gate dielectric layer is disposed below said gate electrode and protrudes therefrom to said drain, thereby separating said gate electrode and said drain by a substantial distance to reduce gate induced drain leakage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for forming the same","description":"A semiconductor device having a substrate, a gate electrode, a source and a drain, and a buried gate dielectric layer is disclosed. The buried gate dielectric layer is disposed below said gate electro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741850","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741850","citation_suggestion":"Patentable. \"Semiconductor device and method for forming the same\" (US-9741850). https://patentable.app/patents/US-9741850","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741850","json":"https://patentable.app/api/llm-context/US-9741850","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:17:09.800Z"}