{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741864","patent":{"patent_number":"US-9741864","title":"Thin-film transistor and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2014-05-02T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present invention provides a thin-film transistor provided with a source electrode (108), a drain electrode (109), a semiconductor layer (105), a gate electrode (103), and an insulating layer (104); wherein the semiconductor layer (105) contains a composite metal oxide obtained by adding to a first metal oxide an oxide having an oxygen dissociation energy that is at least 200 kJ/mol greater than the oxygen dissociation energy of the first metal oxide, whereby the amount of oxygen vacancy is controlled; and the insulating layer (104) is provided with an SiO2 layer, a high-permittivity first layer, and a high-permittivity second layer, whereby the dipoles generated at the boundary between the SiO2 layer and the high-permittivity layers are used to control the threshold voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin-film transistor and method for manufacturing same","description":"The present invention provides a thin-film transistor in which transistor characteristics such as drain current and threshold voltage are improved, and a method of manufacturing the same. The present ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741864","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741864","citation_suggestion":"Patentable. \"Thin-film transistor and method for manufacturing same\" (US-9741864). https://patentable.app/patents/US-9741864","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741864","json":"https://patentable.app/api/llm-context/US-9741864","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:53.297Z"}