{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741871","patent":{"patent_number":"US-9741871","title":"Self-aligned heterojunction field effect transistor","assignee":null,"inventors":[],"filing_date":"2015-11-03T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A junction field effect transistor (JFET) comprises an insulating carrier substrate, a base semiconductor substrate formed on the insulating carrier substrate and a gate region formed on the base semiconductor substrate. The gate region forms a junction with the base semiconductor substrate. The JFET further comprises a first source/drain region formed on the base semiconductor substrate and located on a first side of the gate region and a second source/drain region formed on the base semiconductor substrate and located on a second side of the gate region. A gate stack is deposited on the gate region, a first source/drain stack is deposited on the first source/drain region and a second source/drain stack is deposited on the second source/drain region. At least one of the gate stack, first source/drain stack and second source/drain stack overlaps onto another one of the gate stack, first source/drain stack and second source/drain stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned heterojunction field effect transistor","description":"A junction field effect transistor (JFET) comprises an insulating carrier substrate, a base semiconductor substrate formed on the insulating carrier substrate and a gate region formed on the base semi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741871","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741871","citation_suggestion":"Patentable. \"Self-aligned heterojunction field effect transistor\" (US-9741871). https://patentable.app/patents/US-9741871","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741871","json":"https://patentable.app/api/llm-context/US-9741871","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:40.973Z"}