{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9741900","patent":{"patent_number":"US-9741900","title":"Nitride semiconductor light emitting element","assignee":null,"inventors":[],"filing_date":"2014-12-18T00:00:00.000Z","publication_date":"2017-08-22T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor light emitting element","description":"A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first el","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9741900","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9741900","citation_suggestion":"Patentable. \"Nitride semiconductor light emitting element\" (US-9741900). https://patentable.app/patents/US-9741900","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9741900","json":"https://patentable.app/api/llm-context/US-9741900","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:45.802Z"}