{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9747966","patent":{"patent_number":"US-9747966","title":"Semiconductor memory device for sensing memory cell with variable resistance","assignee":null,"inventors":[],"filing_date":"2016-03-09T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"According to one embodiment, a semiconductor memory device includes a memory cell; a reference signal generation circuit; a sense amplifier; a first transistor configured to electrically couple the memory cell and a first input terminal of the sense amplifier; a second transistor configured to electrically couple the reference signal generation circuit and a second input terminal of the sense amplifier; a first control circuit configured to supply a voltage to gates of the first transistor and the second transistor; a second control circuit configured to supply a first voltage except 0V to a back gate of the first transistor; and a third control circuit configured to supply a second voltage except 0V to a back gate of the second transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device for sensing memory cell with variable resistance","description":"According to one embodiment, a semiconductor memory device includes a memory cell; a reference signal generation circuit; a sense amplifier; a first transistor configured to electrically couple the me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9747966","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9747966","citation_suggestion":"Patentable. \"Semiconductor memory device for sensing memory cell with variable resistance\" (US-9747966). https://patentable.app/patents/US-9747966","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9747966","json":"https://patentable.app/api/llm-context/US-9747966","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:53:09.919Z"}