{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9747967","patent":{"patent_number":"US-9747967","title":"Magnetic field-assisted memory operation","assignee":null,"inventors":[],"filing_date":"2014-09-26T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"In one embodiment, a magnetoresistance random access memory (MRAM) such as a spin transfer torque (STT) random access memory (RAM), for example, has a subarray of bitcells and an electro-magnet positioned adjacent the subarray. A magnetic field is directed through a ferromagnetic device of bitcells of the first subarray to assist in the changing of states of bitcells of the subarray from a first state to a second state in which the ferromagnetic device of the bitcell is changed from one of parallel and anti-parallel polarization to the other of parallel and anti-parallel polarization. Accordingly, the content of the subarray may be readily preset or erased to one of the parallel or anti-parallel state with assistance from an electro-magnet. During a normal write operation, the bits to the other state are written. Other aspects are described herein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic field-assisted memory operation","description":"In one embodiment, a magnetoresistance random access memory (MRAM) such as a spin transfer torque (STT) random access memory (RAM), for example, has a subarray of bitcells and an electro-magnet positi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9747967","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9747967","citation_suggestion":"Patentable. \"Magnetic field-assisted memory operation\" (US-9747967). https://patentable.app/patents/US-9747967","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9747967","json":"https://patentable.app/api/llm-context/US-9747967","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:41.850Z"}