{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748110","patent":{"patent_number":"US-9748110","title":"Method and system for selective spacer etch for multi-patterning schemes","assignee":null,"inventors":[],"filing_date":"2016-08-25T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme, the method comprising: providing a substrate having a first spacer pattern and an underlying layer, the underlying layer comprising a first underlying layer, a second underlying layer, and a target layer; performing a conformal spacer deposition using an oxide, the deposition creating a conformal layer; performing a spacer RIE process and a pull process, thereby generating a second spacer pattern, the spacer RIE process includes adsorption of N-containing gas on a surface of the substrate which activates the surface to react with an F- and/or an H-containing gas to form fluorosilicates; and wherein the integration targets include selectively etching spacer films within a target spacer etch rate, enhanced simultaneous selectivity to the first underlying layer and the second underlying layer and preventing pattern damage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and system for selective spacer etch for multi-patterning schemes","description":"Provided is a method for increasing pattern density of a structure on a substrate using an integration scheme, the method comprising: providing a substrate having a first spacer pattern and an underly","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748110","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748110","citation_suggestion":"Patentable. \"Method and system for selective spacer etch for multi-patterning schemes\" (US-9748110). https://patentable.app/patents/US-9748110","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748110","json":"https://patentable.app/api/llm-context/US-9748110","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:51:15.841Z"}