{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748139","patent":{"patent_number":"US-9748139","title":"Method of fabricating dual damascene structure","assignee":null,"inventors":[],"filing_date":"2016-02-04T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A substrate having thereon a first dielectric layer, a second dielectric layer, and a hard mask layer is provided. A partial via is formed in the second dielectric layer and the hard mask layer. A first photoresist pattern with a first trench opening above the partial via and a second trench opening is formed on the hard mask layer. The hard mask layer and the second dielectric layer are etched through the first trench opening and the second trench opening, thereby forming a first dual damascene structure comprising a first trench and a first via, and a second trench in the second dielectric layer, respectively. A second photoresist pattern having a self-aligned via opening above the second trench is formed. The second dielectric layer is etched through the self-aligned via opening, thereby forming a second dual damascene structure comprising the second trench and a second via under the second trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating dual damascene structure","description":"A substrate having thereon a first dielectric layer, a second dielectric layer, and a hard mask layer is provided. A partial via is formed in the second dielectric layer and the hard mask layer. A fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748139","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748139","citation_suggestion":"Patentable. \"Method of fabricating dual damascene structure\" (US-9748139). https://patentable.app/patents/US-9748139","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748139","json":"https://patentable.app/api/llm-context/US-9748139","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:16.910Z"}