{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748147","patent":{"patent_number":"US-9748147","title":"Method of fabricating epitaxial layer","assignee":null,"inventors":[],"filing_date":"2016-07-20T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of fabricating an epitaxial layer includes providing a silicon substrate. A dielectric layer covers the silicon substrate. A recess is formed in the silicon substrate and the dielectric layer. A selective epitaxial growth process and a non-selective epitaxial growth process are performed in sequence to respectively form a first epitaxial layer and a second epitaxial layer. The first epitaxial layer does not cover the top surface of the dielectric layer. The recess is filled by the first epitaxial layer and the second epitaxial layer. Finally, the first epitaxial layer and the second epitaxial layer are planarized."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating epitaxial layer","description":"A method of fabricating an epitaxial layer includes providing a silicon substrate. A dielectric layer covers the silicon substrate. A recess is formed in the silicon substrate and the dielectric layer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748147","citation_suggestion":"Patentable. \"Method of fabricating epitaxial layer\" (US-9748147). https://patentable.app/patents/US-9748147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748147","json":"https://patentable.app/api/llm-context/US-9748147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:59:55.621Z"}