{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748149","patent":{"patent_number":"US-9748149","title":"Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon","assignee":null,"inventors":[],"filing_date":"2016-03-10T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"A method of manufacturing a silicon carbide semiconductor device includes ion implanting an impurity into a surface of a semiconductor substrate comprised of silicon carbide, forming a protective film in the surface implanted with the impurity, and heat treating the semiconductor substrate covered by the protective film to activate the impurity. During formation of the protective film, the protective film has a 2-layer structure including a first protective film in the surface of the semiconductor substrate that supplies atoms that become insufficient in the semiconductor substrate as a result of the heat treating, and a second protective film in a surface of the first protective film that suppresses vaporization of silicon atoms from the first protective film. The first protective film may be a silicon film and the second protective film may be a carbon film or a carbon nitride film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon","description":"A method of manufacturing a silicon carbide semiconductor device includes ion implanting an impurity into a surface of a semiconductor substrate comprised of silicon carbide, forming a protective film","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748149","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748149","citation_suggestion":"Patentable. \"Method of manufacturing a silicon carbide semiconductor device including forming a protective film with a 2-layer structure comprised of silicon and carbon\" (US-9748149). https://patentable.app/patents/US-9748149","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748149","json":"https://patentable.app/api/llm-context/US-9748149","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:04:14.154Z"}