{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748152","patent":{"patent_number":"US-9748152","title":"Semiconductor arrangement and formation thereof","assignee":null,"inventors":[],"filing_date":"2016-07-07T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Forming a semiconductor arrangement includes non-destructively determining a first spacer height of a first sidewall spacer adjacent a dummy gate and a second spacer height of a second sidewall spacer adjacent the dummy gate based upon a height of a photoresist as measured using optical critical dimension (OCD) spectroscopy. When the photoresist is sufficiently uniform, a hard mask etch is performed to remove a hard mask from the dummy gate and to remove portions of sidewall spacers of the dummy gate. A gate electrode is formed between the first sidewall spacer and the second sidewall spacer to form a substantially uniform gate. Controlling gate formation based upon photoresist height as measured by OCD spectroscopy provides a non-destructive manner of promoting uniformity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor arrangement and formation thereof","description":"Forming a semiconductor arrangement includes non-destructively determining a first spacer height of a first sidewall spacer adjacent a dummy gate and a second spacer height of a second sidewall spacer","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748152","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748152","citation_suggestion":"Patentable. \"Semiconductor arrangement and formation thereof\" (US-9748152). https://patentable.app/patents/US-9748152","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748152","json":"https://patentable.app/api/llm-context/US-9748152","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:45:23.620Z"}