{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748186","patent":{"patent_number":"US-9748186","title":"Semiconductor device and method for manufacturing the semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-03T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device has a module structure in which a semiconductor element and a circuit layer are electrically connected to each other by a wire. A front metal layer is formed on a surface of a top side electrode of the semiconductor element and the wire is bonded to the front metal layer by wire bonding. The front metal layer has a higher hardness than the top side electrode or the wire. A bonding interface of the wire with the metal film has a recrystallization temperature that is equal to or higher than 175° C. According to this structure, it is possible to improve the power cycle resistance of the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the semiconductor device","description":"A semiconductor device has a module structure in which a semiconductor element and a circuit layer are electrically connected to each other by a wire. A front metal layer is formed on a surface of a t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748186","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748186","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the semiconductor device\" (US-9748186). https://patentable.app/patents/US-9748186","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748186","json":"https://patentable.app/api/llm-context/US-9748186","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:18:06.858Z"}