{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748245","patent":{"patent_number":"US-9748245","title":"Multiple finFET formation with epitaxy separation","assignee":null,"inventors":[],"filing_date":"2016-09-23T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device including an nFET device and pFET device adjacent one another. The semiconductor device includes a shallow trench isolator (STI), a gate and a substrate having fins extending upwardly through the STI. The fins include: nFET fins disposed in an nFET epi well formed in the STI and pFET fins disposed in a pFET epi well formed in the STI, a top the STI being above a top of the fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multiple finFET formation with epitaxy separation","description":"A semiconductor device including an nFET device and pFET device adjacent one another. The semiconductor device includes a shallow trench isolator (STI), a gate and a substrate having fins extending up","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748245","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748245","citation_suggestion":"Patentable. \"Multiple finFET formation with epitaxy separation\" (US-9748245). https://patentable.app/patents/US-9748245","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748245","json":"https://patentable.app/api/llm-context/US-9748245","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:15:48.075Z"}