{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748248","patent":{"patent_number":"US-9748248","title":"Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same","assignee":null,"inventors":[],"filing_date":"2016-04-15T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"A semiconductor device includes a substrate including a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned in the trench at a level lower than a top surface of the substrate, and including a first buried portion and a second buried portion over the first buried portion; and a first doping region and a second doping region formed in the substrate on both sides of the gate electrode, and overlapping with the second buried portion, wherein the first buried portion includes a first barrier which has a first work function, and the second buried portion includes a second barrier which has a second work function lower than the first work function."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same","description":"A semiconductor device includes a substrate including a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode positioned in the trench at a level lower than a top surfa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748248","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748248","citation_suggestion":"Patentable. \"Semiconductor device having buried gate structure, method for manufacturing the same, memory cell having the same, and electronic device having the same\" (US-9748248). https://patentable.app/patents/US-9748248","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748248","json":"https://patentable.app/api/llm-context/US-9748248","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:16.609Z"}