{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748251","patent":{"patent_number":"US-9748251","title":"Methods of forming semiconductor devices using semi-bidirectional patterning","assignee":null,"inventors":[],"filing_date":"2016-11-15T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an intermediate semiconductor device having a dielectric layer, a first hardmask layer, a second hardmask layer, a third hardmask layer, and a lithography stack; patterning a first set of lines; patterning a second set of lines between the first set of lines; etching to define a combination of the first and second set of lines; depositing a second lithography stack; patterning a third set of lines in a direction perpendicular to the first and second set of lines; etching to define the third set of lines, leaving an OPL; depositing a spacer over the OPL; etching the spacer, leaving a vertical set of spacers; and etching the second hardmask layer using the third hardmask layer and the set of vertical spacers as masks."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming semiconductor devices using semi-bidirectional patterning","description":"Devices and methods of fabricating integrated circuit devices using semi-bidirectional patterning are provided. One method includes, for instance: obtaining an intermediate semiconductor device having","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748251","citation_suggestion":"Patentable. \"Methods of forming semiconductor devices using semi-bidirectional patterning\" (US-9748251). https://patentable.app/patents/US-9748251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748251","json":"https://patentable.app/api/llm-context/US-9748251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:18:47.636Z"}