{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748254","patent":{"patent_number":"US-9748254","title":"Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate","assignee":null,"inventors":[],"filing_date":"2016-01-05T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":17,"abstract":"The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines and an insulating layer that is provided between the first bit lines and in a groove. First faces of the first bit lines are aligned on a first line and second faces of the first bit lines are aligned on a second line. A first face of the insulating layer is disposed at a third line that is a first distance from the first line in a first direction and a second face of the insulating layer is disposed at a fourth line that is a second distance from the second line in a second direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate","description":"The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748254","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748254","citation_suggestion":"Patentable. \"Convex shaped thin-film transistor device having elongated channel over insulating layer in a groove of a semiconductor substrate\" (US-9748254). https://patentable.app/patents/US-9748254","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748254","json":"https://patentable.app/api/llm-context/US-9748254","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:32:47.087Z"}