{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748259","patent":{"patent_number":"US-9748259","title":"Method of forming a semiconductor device structure and semiconductor device structure","assignee":null,"inventors":[],"filing_date":"2016-02-25T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The present disclosure provides, in accordance with some illustrative embodiments, a semiconductor device structure including a hybrid substrate comprising an SOI region and a bulk region, the SOI region comprising an active semiconductor layer, a substrate material, and a buried insulating material interposed between the active semiconductor layer and the substrate material, and the bulk region being provided by the substrate material, an insulating structure formed in the hybrid substrate, the insulating structure separating the bulk region and the SOI region, and a gate electrode formed in the bulk region, wherein the insulating structure is in contact with two opposing sidewalls of the gate electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a semiconductor device structure and semiconductor device structure","description":"The present disclosure provides, in accordance with some illustrative embodiments, a semiconductor device structure including a hybrid substrate comprising an SOI region and a bulk region, the SOI reg","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748259","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748259","citation_suggestion":"Patentable. \"Method of forming a semiconductor device structure and semiconductor device structure\" (US-9748259). https://patentable.app/patents/US-9748259","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748259","json":"https://patentable.app/api/llm-context/US-9748259","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:58:42.927Z"}