{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748274","patent":{"patent_number":"US-9748274","title":"Memory device comprising stacked memory cells and electronic device including the same","assignee":null,"inventors":[],"filing_date":"2016-05-20T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":15,"abstract":"A memory device in which the number of films is reduced. The memory device includes a circuit and a wiring. The circuit includes a first memory cell and a second memory cell. The first memory cell includes a first transistor, a second transistor, and a first capacitor. The second memory cell includes a third transistor, a fourth transistor, and a second capacitor. The second memory cell is stacked over the first memory cell. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor and the first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the fourth transistor and the second capacitor. A gate of the first transistor and a gate of the third transistor are electrically connected to the wiring."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device comprising stacked memory cells and electronic device including the same","description":"A memory device in which the number of films is reduced. The memory device includes a circuit and a wiring. The circuit includes a first memory cell and a second memory cell. The first memory cell inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748274","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748274","citation_suggestion":"Patentable. \"Memory device comprising stacked memory cells and electronic device including the same\" (US-9748274). https://patentable.app/patents/US-9748274","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748274","json":"https://patentable.app/api/llm-context/US-9748274","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:36:06.538Z"}