{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748282","patent":{"patent_number":"US-9748282","title":"Thin film transistor array substrate having a gate electrode comprising two conductive layers","assignee":null,"inventors":[],"filing_date":"2015-05-26T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["G02F","G02F"],"num_claims":10,"abstract":"Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentration on a substrate, a source-drain area disposed at opposite sides of the channel area and with a second doping concentration greater than the first doping concentration, and a substantially undoped area extending from the source-drain area. The substrate has a gate insulating layer on the semiconductor layer and a gate electrode disposed on the gate insulating layer and overlapping the channel area in at least some portions. The substrate has a source electrode and a drain electrode, each insulated from the gate electrode and electrically connected to the source-drain area. The gate electrode includes a first gate electrode layer and a second gate electrode layer, wherein the second gate electrode layer is thicker than the first gate electrode layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor array substrate having a gate electrode comprising two conductive layers","description":"Provided is a thin film transistor array substrate having at least one thin film transistor. The thin film transistor includes a semiconductor layer having a channel area with a first doping concentra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748282","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748282","citation_suggestion":"Patentable. \"Thin film transistor array substrate having a gate electrode comprising two conductive layers\" (US-9748282). https://patentable.app/patents/US-9748282","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748282","json":"https://patentable.app/api/llm-context/US-9748282","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:02.873Z"}