{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748342","patent":{"patent_number":"US-9748342","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-09-15T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC substrate, having a first surface, and having a lower first-conductivity-type impurity concentration than the SiC substrate, first second-conductivity-type SiC regions provided in the first surface of the SiC layer, second second-conductivity-type SiC regions provided in the first SiC regions and having a higher second-conductivity-type impurity concentration than the first SiC region, silicide layers provided on the second SiC regions and having a second surface, a difference between a distance from the SiC substrate to the second surface and a distance from the SiC substrate to the first surface being equal to or less than 0.2 μm, a first electrode provided to contact with the SiC layer and the silicide layers, and a second electrode provided to contact with the SiC substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC substrate, having a first surface, and havin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748342","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748342","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9748342). https://patentable.app/patents/US-9748342","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748342","json":"https://patentable.app/api/llm-context/US-9748342","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:55:59.294Z"}