{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748344","patent":{"patent_number":"US-9748344","title":"Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride","assignee":null,"inventors":[],"filing_date":"2016-07-06T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×108 pieces/cm2 or more and 1×1011 pieces/cm2 or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride","description":"The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748344","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748344","citation_suggestion":"Patentable. \"Nitride semiconductor substrate having recesses at interface between base substrate and initial nitride\" (US-9748344). https://patentable.app/patents/US-9748344","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748344","json":"https://patentable.app/api/llm-context/US-9748344","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:16.173Z"}