{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748367","patent":{"patent_number":"US-9748367","title":"Method for making thim film transistor","assignee":null,"inventors":[],"filing_date":"2016-11-01T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5˜2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for making thim film transistor","description":"A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748367","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748367","citation_suggestion":"Patentable. \"Method for making thim film transistor\" (US-9748367). https://patentable.app/patents/US-9748367","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748367","json":"https://patentable.app/api/llm-context/US-9748367","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:14:36.636Z"}