{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748369","patent":{"patent_number":"US-9748369","title":"Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate","assignee":null,"inventors":[],"filing_date":"2016-09-07T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":11,"abstract":"A bipolar transistor is supported by a substrate including a semiconductor layer overlying an insulating layer. A transistor base is formed by a base region in the semiconductor layer that is doped with a first conductivity type dopant at a first dopant concentration. The transistor emitter and collector are formed by regions doped with a second conductivity type dopant and located adjacent opposite sides of the base region. An extrinsic base includes an epitaxial semiconductor layer in contact with a top surface of the base region. The epitaxial semiconductor layer is doped with the first conductivity type dopant at a second dopant concentration greater than the first dopant concentration. Sidewall spacers on each side of the extrinsic base include an oxide liner on a side of the epitaxial semiconductor layer and the top surface of the base region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate","description":"A bipolar transistor is supported by a substrate including a semiconductor layer overlying an insulating layer. A transistor base is formed by a base region in the semiconductor layer that is doped wi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748369","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748369","citation_suggestion":"Patentable. \"Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate\" (US-9748369). https://patentable.app/patents/US-9748369","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748369","json":"https://patentable.app/api/llm-context/US-9748369","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:20:23.541Z"}