{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748376","patent":{"patent_number":"US-9748376","title":"Power FET with integrated sensors and method of manufacturing","assignee":null,"inventors":[],"filing_date":"2016-08-26T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current fault sensor, and a temperature sensor. The structure of the power FET includes a drain contact region of a first conductivity type disposed in the substrate, a drain drift region of the first conductivity type disposed over the drain contact region, doped polysilicon trenches disposed in the drain drift region, a body region of a second conductivity type, opposite from the first conductivity type, disposed between the doped polysilicon trenches, a source region disposed on a lateral side of the doped polysilicon trenches and in contact with the body region, and a source contact trench that makes contact with the source region and with the doped polysilicon trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power FET with integrated sensors and method of manufacturing","description":"A semiconductor device and a method of making are disclosed. The device includes a substrate, a power field effect transistor (FET), and integrated sensors including a current sensor, a high current f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748376","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748376","citation_suggestion":"Patentable. \"Power FET with integrated sensors and method of manufacturing\" (US-9748376). https://patentable.app/patents/US-9748376","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748376","json":"https://patentable.app/api/llm-context/US-9748376","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:39:52.510Z"}