{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748379","patent":{"patent_number":"US-9748379","title":"Double exponential mechanism controlled transistor","assignee":null,"inventors":[],"filing_date":"2015-08-26T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure relates to a tunnel FET device with a steep sub-threshold slope, and a corresponding method of formation. In some embodiments, the tunnel FET device has a dielectric layer arranged over a substrate. A conductive gate electrode and a conductive drain electrode are arranged over the dielectric layer. A conductive source electrode contacts the substrate at a first position located along a first side of the conductive gate electrode. The conductive drain electrode is arranged at a second position located along the first side of the conductive gate electrode. By arranging the conductive gate electrode over the dielectric layer at a position laterally offset from the conductive drain electrode, the conductive gate electrode is able to generate an electric field that controls tunneling of minority carriers, which can change the effective barrier height of the tunnel barrier, and thereby improving a sub-threshold slope of the tunnel FET device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Double exponential mechanism controlled transistor","description":"The present disclosure relates to a tunnel FET device with a steep sub-threshold slope, and a corresponding method of formation. In some embodiments, the tunnel FET device has a dielectric layer arran","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748379","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748379","citation_suggestion":"Patentable. \"Double exponential mechanism controlled transistor\" (US-9748379). https://patentable.app/patents/US-9748379","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748379","json":"https://patentable.app/api/llm-context/US-9748379","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:34:11.190Z"}