{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748393","patent":{"patent_number":"US-9748393","title":"Silicon carbide semiconductor device with a trench","assignee":null,"inventors":[],"filing_date":"2013-10-17T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":6,"abstract":"It is an object of the present invention to provide a silicon carbide semiconductor device that reduces a channel resistance and increases reliability of a gate insulating film. The present invention includes a trench partially formed in a surface layer of an epitaxial layer, a well layer formed along side surfaces and a bottom surface of the trench, a source region formed in a surface layer of the well layer on the bottom surface of the trench, a gate insulating film, and a gate electrode. The gate insulating film is formed along the side surfaces of the trench and has one end formed so as to reach the source region. The gate electrode is formed along the side surfaces of the trench and formed on the gate insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device with a trench","description":"It is an object of the present invention to provide a silicon carbide semiconductor device that reduces a channel resistance and increases reliability of a gate insulating film. The present invention ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748393","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748393","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device with a trench\" (US-9748393). https://patentable.app/patents/US-9748393","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748393","json":"https://patentable.app/api/llm-context/US-9748393","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:53:14.507Z"}