{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748395","patent":{"patent_number":"US-9748395","title":"Thin film transistor and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-23T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":11,"abstract":"A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer disposed between the gate electrode and the channel layer, an etching stop layer disposed on the channel layer, and a source electrode and a drain electrode disposed on the etching stop layer. The gate electrode has multiple through holes, the etching stop layer has multiple contact holes overlapped with the through holes in a direction perpendicular to the substrate, and the source and drain electrodes are respectively electrically connected to the channel layer through the contact holes. A method of manufacturing the thin film transistor, where the contact holes in the etching stop layer are formed by backside exposure using the gate electrode as a mask. A conductivity of a region of the channel layer exposed by the contact holes has a great conductivity."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thin film transistor and manufacturing method thereof","description":"A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer disposed between the gate electrode and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748395","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748395","citation_suggestion":"Patentable. \"Thin film transistor and manufacturing method thereof\" (US-9748395). https://patentable.app/patents/US-9748395","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748395","json":"https://patentable.app/api/llm-context/US-9748395","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:38.602Z"}