{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9748410","patent":{"patent_number":"US-9748410","title":"N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-10-15T00:00:00.000Z","publication_date":"2017-08-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm−3 and a dislocation density of 106 cm−2 or less. An ohmic electrode layer is formed on an N-polarity side of the n-type aluminum nitride single-crystal substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device","description":"A vertical nitride semiconductor device includes an n-type aluminum nitride single-crystal substrate having an Si content of 3×1017 to 1×1020 cm−3 and a dislocation density of 106 cm−2 or less. An ohm","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9748410","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9748410","citation_suggestion":"Patentable. \"N-type aluminum nitride single-crystal substrate and vertical nitride semiconductor device\" (US-9748410). https://patentable.app/patents/US-9748410","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9748410","json":"https://patentable.app/api/llm-context/US-9748410","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:46.537Z"}