{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9752251","patent":{"patent_number":"US-9752251","title":"Self-limiting selective epitaxy process for preventing merger of semiconductor fins","assignee":null,"inventors":[],"filing_date":"2013-04-15T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":25,"abstract":"A self-limiting selective epitaxy process can be employed on a plurality of semiconductor fins such that the sizes of raised active semiconductor regions formed by the selective epitaxy process are limited to dimensions determined by the sizes of the semiconductor fins. Specifically, the self-limiting selective epitaxy process limits growth of the semiconductor material along directions that are perpendicular to crystallographic facets formed during the selective epitaxy process. Once the crystallographic facets become adjoined to one another or to a dielectric surface, growth of the semiconductor material terminates, thereby preventing merger among epitaxially deposited semiconductor materials."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-limiting selective epitaxy process for preventing merger of semiconductor fins","description":"A self-limiting selective epitaxy process can be employed on a plurality of semiconductor fins such that the sizes of raised active semiconductor regions formed by the selective epitaxy process are li","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9752251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9752251","citation_suggestion":"Patentable. \"Self-limiting selective epitaxy process for preventing merger of semiconductor fins\" (US-9752251). https://patentable.app/patents/US-9752251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9752251","json":"https://patentable.app/api/llm-context/US-9752251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:30:55.349Z"}