{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754640","patent":{"patent_number":"US-9754640","title":"Sensing circuit and method utilizing voltage replication for non-volatile memory device","assignee":null,"inventors":[],"filing_date":"2016-10-19T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A sensing circuit for a non-volatile memory device is provided. The sensing circuit includes a bias generating circuit and a first sense amplifier. The bias generating circuit includes a driving circuit biased by a reference current and an operational amplifier. The operation amplifier receives a reference voltage at a non-inverting input terminal, and generates an output voltage at an inverting input terminal via a negative feedback path including the driving circuit. The first sense amplifier includes a first replica circuit and a first current sensing circuit. The first replica circuit replicates the output voltage to a first bit line coupled to a first memory cell. The first current sensing circuit senses a first current difference between a scaled version of the reference current and a first cell current of the first memory cell to determine a first memory state of the first memory cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sensing circuit and method utilizing voltage replication for non-volatile memory device","description":"A sensing circuit for a non-volatile memory device is provided. The sensing circuit includes a bias generating circuit and a first sense amplifier. The bias generating circuit includes a driving circu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754640","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754640","citation_suggestion":"Patentable. \"Sensing circuit and method utilizing voltage replication for non-volatile memory device\" (US-9754640). https://patentable.app/patents/US-9754640","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754640","json":"https://patentable.app/api/llm-context/US-9754640","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:20.204Z"}