{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754646","patent":{"patent_number":"US-9754646","title":"Voltage stress tolerant high speed memory driver having flying capacitor circuit","assignee":null,"inventors":[],"filing_date":"2016-11-03T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"Embodiments relate to circuits, electronic design automation (EDA) circuit layouts, systems, methods, and computer readable media to enable logic devices operating on a core supply voltage to drive memory devices operating on a different supply voltage using low power and high data rates while avoiding voltage over-stress of thin-oxide transistors. In an embodiment, channels of a thin-oxide PMOS transistor, a thick-oxide PMOS transistor, a thick-oxide NMOS transistor, and a thin-oxide NMOS transistor are coupled in order from a memory device voltage supply rail to a low voltage supply rail. Gates of the thin-oxide PMOS transistor and the thick-oxide NMOS transistor are coupled with an output of a flying capacitor circuit that level-shifts an input signal by a difference between the memory device supply and core supply voltages, while gates of the thick-oxide PMOS transistor and the thin-oxide NMOS transistor receive the input signal via a buffer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Voltage stress tolerant high speed memory driver having flying capacitor circuit","description":"Embodiments relate to circuits, electronic design automation (EDA) circuit layouts, systems, methods, and computer readable media to enable logic devices operating on a core supply voltage to drive me","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754646","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754646","citation_suggestion":"Patentable. \"Voltage stress tolerant high speed memory driver having flying capacitor circuit\" (US-9754646). https://patentable.app/patents/US-9754646","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754646","json":"https://patentable.app/api/llm-context/US-9754646","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:34:53.181Z"}