{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754653","patent":{"patent_number":"US-9754653","title":"Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell","assignee":null,"inventors":[],"filing_date":"2013-10-11T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magnetization, a tunnel barrier layer, and a SAF storage magnetic layer including a first and second storage magnetization being coupled antiparallel through a storage coupling layer and freely orientable at a high temperature threshold. The method includes: heating the magnetic tunnel junction to the high temperature threshold; and applying a write magnetic field to orient the first and second storage magnetization; wherein the high temperature threshold includes one of a first or third high temperature threshold such as to orient the first storage magnetization respectively antiparallel or parallel to the second storage magnetization; or a second high temperature threshold such as to orient the first storage magnetization with an angle below 180° with respect to the second storage magnetization."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell","description":"Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a reference magnetic layer having a reference magn","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754653","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754653","citation_suggestion":"Patentable. \"Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell\" (US-9754653). https://patentable.app/patents/US-9754653","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754653","json":"https://patentable.app/api/llm-context/US-9754653","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:35:31.776Z"}