{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754783","patent":{"patent_number":"US-9754783","title":"Method for producing a semiconductor device, and semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-09-08T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming an aluminum nitride layer on a surface of the nitride-based semiconductor layer at a forming temperature and in a growth atmosphere for aluminum nitride; and performing a thermal treatment on the nitride-based semiconductor layer and the aluminum nitride layer, at a treatment temperature that is higher than the forming temperature and in the growth atmosphere for aluminum nitride. For example, an n-GaN layer is formed on an n-GaN substrate, and thereafter the n-GaN layer is doped with an impurity. A cap layer of an epitaxial film made up of AlN is formed, by MOCVD, on the surface of the n-GaN layer. Thermal treatment for activation annealing activates the impurity in the n-GaN layer in an atmosphere that causes AlN to grow, or in an atmosphere in which growth and decomposition of AlN are substantially balanced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a semiconductor device, and semiconductor device","description":"A method for producing a semiconductor device having a nitride-based semiconductor layer includes forming an aluminum nitride layer on a surface of the nitride-based semiconductor layer at a forming t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754783","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754783","citation_suggestion":"Patentable. \"Method for producing a semiconductor device, and semiconductor device\" (US-9754783). https://patentable.app/patents/US-9754783","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754783","json":"https://patentable.app/api/llm-context/US-9754783","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:59:01.264Z"}