{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754788","patent":{"patent_number":"US-9754788","title":"Manufacturing method of semiconductor structure including planarizing a polysilicon layer over an array area and a periphery area","assignee":null,"inventors":[],"filing_date":"2015-07-13T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A manufacturing method of a semiconductor structure having an array area and a periphery area is provided. The manufacturing method includes the following steps. A substrate is provided. A plurality of trenches is formed on the substrate. The plurality of trenches is filled with insulating material to form at least one first insulating layer. A polysilicon layer is deposited on the substrate and the first insulating layer. A photoresist mask is formed on the periphery area. A portion of the polysilicon layer on the array area is etched, such that a top surface of the polysilicon layer on the array area is higher than the first insulating layer and lower than a top surface of the polysilicon layer on the periphery area. The photoresist mask is removed. A planarization process is implemented to remove a portion of the polysilicon layer on the array area and on the periphery area."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor structure including planarizing a polysilicon layer over an array area and a periphery area","description":"A manufacturing method of a semiconductor structure having an array area and a periphery area is provided. The manufacturing method includes the following steps. A substrate is provided. A plurality o","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754788","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754788","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor structure including planarizing a polysilicon layer over an array area and a periphery area\" (US-9754788). https://patentable.app/patents/US-9754788","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754788","json":"https://patentable.app/api/llm-context/US-9754788","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:20:35.118Z"}