{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754792","patent":{"patent_number":"US-9754792","title":"Fin cutting process for manufacturing FinFET semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-02-29T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"One illustrative method disclosed herein includes, among other things, forming an original fin-formation etch mask comprised of a plurality of original line-type features and removing at least a portion of at least one of the plurality of original line-type features so as to thereby define a modified fin-formation etch mask comprising the remaining portions of the plurality of original line-type features. The method also includes forming a conformal layer of material on the remaining portions of the plurality of original line-type features of the modified fin-formation etch mask and performing at least one etching process to remove at least portions of the conformal layer of material and to define a plurality of fin-formation trenches so as to thereby initially define a plurality of fins in the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin cutting process for manufacturing FinFET semiconductor devices","description":"One illustrative method disclosed herein includes, among other things, forming an original fin-formation etch mask comprised of a plurality of original line-type features and removing at least a porti","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754792","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754792","citation_suggestion":"Patentable. \"Fin cutting process for manufacturing FinFET semiconductor devices\" (US-9754792). https://patentable.app/patents/US-9754792","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754792","json":"https://patentable.app/api/llm-context/US-9754792","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:30:20.581Z"}