{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754795","patent":{"patent_number":"US-9754795","title":"Chemical-mechanical planarization process using silicon oxynitride anti-reflective layer","assignee":null,"inventors":[],"filing_date":"2015-04-30T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A chemical-mechanical polishing process using a silicon oxynitride anti-reflection layer (S340) includes: (S1) providing a semiconductor wafer comprising a substrate (S310), an oxidation layer (S320) formed on the substrate (S310), a silicon nitride layer (S330) formed on the oxidation layer (S320), an anti-reflection layer (S340) formed on the silicon nitride layer (S330), a trench extending through the anti-reflection layer (S340) and into the substrate (S310), and a first silicon dioxide layer (S350) filling the trench and covering the anti-reflection layer (S340); (S2) polishing the first silicon dioxide layer (S350) until the anti-reflection layer (S340) is exposed; (S3) removing the anti-reflection layer (S340) by dry etching; (S4) forming a second silicon dioxide layer (S360) on the surface of the semiconductor wafer from which the anti-reflection layer (S340) is removed; (S5) polishing the second silicon dioxide layer (S360) until the silicon nitride layer (S330) is exposed; (S6) and, removing the silicon nitride layer (S330)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Chemical-mechanical planarization process using silicon oxynitride anti-reflective layer","description":"A chemical-mechanical polishing process using a silicon oxynitride anti-reflection layer (S340) includes: (S1) providing a semiconductor wafer comprising a substrate (S310), an oxidation layer (S320) ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754795","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754795","citation_suggestion":"Patentable. \"Chemical-mechanical planarization process using silicon oxynitride anti-reflective layer\" (US-9754795). https://patentable.app/patents/US-9754795","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754795","json":"https://patentable.app/api/llm-context/US-9754795","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:52:29.024Z"}