{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754802","patent":{"patent_number":"US-9754802","title":"Thermal doping by vacancy formation in nanocrystals","assignee":null,"inventors":[],"filing_date":"2014-07-10T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","B82Y","B82Y"],"num_claims":16,"abstract":"The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thermal doping by vacancy formation in nanocrystals","description":"The invention generally relates to methods of thermal doping by vacancy formation in nanocrystals, devices and uses thereof.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754802","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754802","citation_suggestion":"Patentable. \"Thermal doping by vacancy formation in nanocrystals\" (US-9754802). https://patentable.app/patents/US-9754802","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754802","json":"https://patentable.app/api/llm-context/US-9754802","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:36:20.813Z"}