{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754819","patent":{"patent_number":"US-9754819","title":"Interlevel airgap dielectric","assignee":null,"inventors":[],"filing_date":"2015-12-22T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method of forming a semiconductor device includes: forming a lower trace in a lower dielectric layer; reducing a height of the lower trace a distance equal to gap height (g) to form an initial void region; filling the initial void region with an amorphous carbon layer; forming an upper dielectric layer above the amorphous carbon layer; covering the amorphous carbon layer with at least an oxide layer and a nitride layer; forming a hole in the oxide and nitride layers to expose a portion of the amorphous carbon layer; exposing the amorphous carbon layer to oxygen plasma to remove the amorphous carbon layer; sputtering a metal layer over the oxide layer and into a void created removal of the amorphous carbon layer to divide the void such that it includes an airgap; and forming an upper trace over the airgap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Interlevel airgap dielectric","description":"A method of forming a semiconductor device includes: forming a lower trace in a lower dielectric layer; reducing a height of the lower trace a distance equal to gap height (g) to form an initial void ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754819","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754819","citation_suggestion":"Patentable. \"Interlevel airgap dielectric\" (US-9754819). https://patentable.app/patents/US-9754819","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754819","json":"https://patentable.app/api/llm-context/US-9754819","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:59:15.517Z"}