{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754841","patent":{"patent_number":"US-9754841","title":"Method of forming integrated circuit having plural transistors with work function metal gate structures","assignee":null,"inventors":[],"filing_date":"2016-03-03T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"The present invention provides a method of forming an integrated circuit including a substrate, a first transistor, a second transistor and a third transistor. The first transistor has a first metal gate including a first bottom barrier layer, a first work function metal layer and a first metal layer. The second transistor has a second metal gate including a second bottom barrier layer, a second work function metal layer and a second metal layer. The third transistor has a third metal gate including a third bottom barrier layer, a third work function metal layer and a third metal layer. The first transistor, the second transistor and the third transistor has the same conductive type. A nitrogen concentration of the first bottom barrier layer>a nitrogen concentration of the second bottom barrier layer>a nitrogen concentration of the third bottom barrier layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming integrated circuit having plural transistors with work function metal gate structures","description":"The present invention provides a method of forming an integrated circuit including a substrate, a first transistor, a second transistor and a third transistor. The first transistor has a first metal g","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754841","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754841","citation_suggestion":"Patentable. \"Method of forming integrated circuit having plural transistors with work function metal gate structures\" (US-9754841). https://patentable.app/patents/US-9754841","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754841","json":"https://patentable.app/api/llm-context/US-9754841","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:14:00.189Z"}