{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754843","patent":{"patent_number":"US-9754843","title":"Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication","assignee":null,"inventors":[],"filing_date":"2016-07-08T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"A method of forming Si or Ge-based and III-V based vertically integrated nanowires on a single substrate and the resulting device are provided. Embodiments include forming first trenches in a Si, Ge, III-V, or SixGe1-x substrate; forming a conformal SiN, SiOxCyNz layer over side and bottom surfaces of the first trenches; filling the first trenches with SiOx; forming a first mask over portions of the Si, Ge, III-V, or SixGe1-x substrate; removing exposed portions of the Si, Ge, III-V, or SixGe1-x substrate, forming second trenches; forming III-V, III-VxMy, or Si nanowires in the second trenches; removing the first mask and forming a second mask over the III-VxMy, or Si nanowires and intervening first trenches; removing the SiOx layer, forming third trenches; and removing the second mask."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication","description":"A method of forming Si or Ge-based and III-V based vertically integrated nanowires on a single substrate and the resulting device are provided. Embodiments include forming first trenches in a Si, Ge, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754843","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754843","citation_suggestion":"Patentable. \"Heterogeneous integration of 3D Si and III-V vertical nanowire structures for mixed signal circuits fabrication\" (US-9754843). https://patentable.app/patents/US-9754843","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754843","json":"https://patentable.app/api/llm-context/US-9754843","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:29:28.141Z"}