{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754880","patent":{"patent_number":"US-9754880","title":"Semiconductor devices including a contact structure and methods of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-05T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"The semiconductor device may include an insulating interlayer on the substrate, the substrate including a contact region at an upper portion thereof, a main contact plug penetrating through the insulating interlayer and contacting the contact region, the main contact plug having a pillar shape and including a first barrier pattern and a first metal pattern, and an extension pattern surrounding on an upper sidewall of the main contact plug, the extension pattern including a barrier material. In the semiconductor device, an alignment margin between the contact structure and an upper wiring thereon may increase. Also, a short failure between the contact structure and the gate electrode may be reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including a contact structure and methods of manufacturing the same","description":"The semiconductor device may include an insulating interlayer on the substrate, the substrate including a contact region at an upper portion thereof, a main contact plug penetrating through the insula","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754880","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754880","citation_suggestion":"Patentable. \"Semiconductor devices including a contact structure and methods of manufacturing the same\" (US-9754880). https://patentable.app/patents/US-9754880","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754880","json":"https://patentable.app/api/llm-context/US-9754880","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:00:46.329Z"}