{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754884","patent":{"patent_number":"US-9754884","title":"Method of manufacturing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-07-12T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"Pretreatment is carried out in a first chamber. Then, a mixed gas of titanium tetrachloride and hydrogen is supplied into a second chamber. At this time, conditions are set such that partial pressure of the titanium tetrachloride is higher than 3 Pa. The conditions are set such that the product of the partial pressure of the titanium tetrachloride and supply time is greater than 800 Pa·second. The titanium tetrachloride continues to be supplied into the second chamber to form a titanium film under prescribed temperature conditions in a plasma atmosphere. The temperature conditions are set such that temperature is higher than temperature at which titanium silicide is formed and lower than temperature at which a metal silicide film agglomerates. A titanium nitride film is formed in a third chamber."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device and semiconductor device","description":"Pretreatment is carried out in a first chamber. Then, a mixed gas of titanium tetrachloride and hydrogen is supplied into a second chamber. At this time, conditions are set such that partial pressure ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754884","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device and semiconductor device\" (US-9754884). https://patentable.app/patents/US-9754884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754884","json":"https://patentable.app/api/llm-context/US-9754884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:07.155Z"}