{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754930","patent":{"patent_number":"US-9754930","title":"ESD protection device with improved bipolar gain using cutout in the body well","assignee":null,"inventors":[],"filing_date":"2016-10-13T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":3,"abstract":"An integrated circuit includes an NMOS SCR in which a p-type body well of the NMOS transistor provides a base layer for a vertical NPN layer stack. The base layer is formed by implanting p-type dopants using an implant mask which has a cutout mask element over the base area, so as to block the p-type dopants from the base area. The base layer is implanted concurrently with p-type body wells under NMOS transistors in logic components in the integrated circuit. Subsequent anneals cause the p-type dopants to diffuse into the base area, forming a base with a lower doping density that adjacent regions of the body well of the NMOS transistor in the NMOS SCR. The NMOS SCR may have a symmetric transistor, a drain extended transistor, or may be a bidirectional NMOS SCR with a symmetric transistor integrated with a drain extended transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"ESD protection device with improved bipolar gain using cutout in the body well","description":"An integrated circuit includes an NMOS SCR in which a p-type body well of the NMOS transistor provides a base layer for a vertical NPN layer stack. The base layer is formed by implanting p-type dopant","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754930","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754930","citation_suggestion":"Patentable. \"ESD protection device with improved bipolar gain using cutout in the body well\" (US-9754930). https://patentable.app/patents/US-9754930","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754930","json":"https://patentable.app/api/llm-context/US-9754930","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:05:18.185Z"}