{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754935","patent":{"patent_number":"US-9754935","title":"Raised metal semiconductor alloy for self-aligned middle-of-line contact","assignee":null,"inventors":[],"filing_date":"2014-08-07T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"A method to form self-aligned middle-of-line (MOL) contacts between functional gate structures without the need of lithographic patterning and etching by using raised metal semiconductor alloy regions is provided. Raised metal semiconductor alloy regions are formed by reacting a metal layer with a semiconductor material in raised semiconductor material regions formed on portions of at least one active region of a substrate located between functional gate structures. The metal layer includes a metal capable of forming a metal semiconductor alloy with a large volume expansion such that the resulting metal semiconductor alloy regions can be raised to a same height as that of the functional gate structures. As a result, no lithographic patterning and etching between functional gate structures are needed when forming MOL contacts to these raised metal semiconductor alloy regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Raised metal semiconductor alloy for self-aligned middle-of-line contact","description":"A method to form self-aligned middle-of-line (MOL) contacts between functional gate structures without the need of lithographic patterning and etching by using raised metal semiconductor alloy regions","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754935","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754935","citation_suggestion":"Patentable. \"Raised metal semiconductor alloy for self-aligned middle-of-line contact\" (US-9754935). https://patentable.app/patents/US-9754935","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754935","json":"https://patentable.app/api/llm-context/US-9754935","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:37.832Z"}