{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9754941","patent":{"patent_number":"US-9754941","title":"Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate","assignee":null,"inventors":[],"filing_date":"2015-06-03T00:00:00.000Z","publication_date":"2017-09-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method of forming a semiconductor structure that includes compressive strained silicon germanium alloy fins having a first germanium content and tensile strained silicon germanium alloy fins having a second germanium content that is less than the first germanium content is provided. The different strained and germanium content silicon germanium alloy fins are located on a same substrate. The method includes forming a cladding layer of silicon around a set of the silicon germanium alloy fins, and forming a cladding layer of a germanium containing material around another set of the silicon germanium alloy fins. Thermal mixing is then employed to form the different strained and germanium content silicon germanium alloy fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate","description":"A method of forming a semiconductor structure that includes compressive strained silicon germanium alloy fins having a first germanium content and tensile strained silicon germanium alloy fins having ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9754941","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9754941","citation_suggestion":"Patentable. \"Method and structure to form tensile strained SiGe fins and compressive strained SiGe fins on a same substrate\" (US-9754941). https://patentable.app/patents/US-9754941","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9754941","json":"https://patentable.app/api/llm-context/US-9754941","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:26.254Z"}